Open AccessThe fabrication of metal–oxide–semiconductor transistors using cerium dioxide as a gate oxide material
Author(s) -
A. G. Frangoul,
Kalpathy B. Sundaram,
Parveen Wahid
Publication year - 1991
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.585285
Subject(s) - materials science , oxide , optoelectronics , transistor , fabrication , cerium oxide , semiconductor , cerium , threshold voltage , thin film transistor , metal , voltage , nanotechnology , electrical engineering , metallurgy , layer (electronics) , medicine , alternative medicine , pathology , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom