Open AccessAnalysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS
Author(s) -
M. K. I. Senevirathna,
M. D. Williams,
G. A. Cooke,
Alexander Kozhanov,
M. W. Ver,
Garnett Cross
Publication year - 2020
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5144500
Subject(s) - materials science , dopant , secondary ion mass spectrometry , analytical chemistry (journal) , gallium , chemical vapor deposition , ion beam , ion , static secondary ion mass spectrometry , gallium nitride , ion implantation , yield (engineering) , sputtering , doping , thin film , chemistry , optoelectronics , nanotechnology , metallurgy , organic chemistry , chromatography , layer (electronics)
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