Open AccessAnalysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS
Author(s) -
M. K. I. Senevirathna,
M. D. Williams,
G. A. Cooke,
Alexander Kozhanov,
M. W. Ver,
Brendan Cross
Publication year - 2020
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5144500
Subject(s) - secondary ion mass spectrometry , dopant , analytical chemistry (journal) , gallium , ion beam , materials science , ion , static secondary ion mass spectrometry , chemical vapor deposition , oxygen , gallium nitride , quadrupole , doping , chemistry , atomic physics , optoelectronics , nanotechnology , metallurgy , physics , organic chemistry , chromatography , layer (electronics)