Open AccessEtching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment
Author(s) -
Chen Li,
Thorsten Hofmann,
Klaus Edinger,
Valery Godyak,
Gottlieb S. Oehrlein
Publication year - 2020
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5143538
Subject(s) - atomic physics , cathode , plasma , electron , langmuir probe , plasma cleaning , acceleration voltage , reactive ion etching , ionization , materials science , secondary electrons , plasma etching , chemistry , analytical chemistry (journal) , etching (microfabrication) , cathode ray , plasma diagnostics , nanotechnology , ion , physics , layer (electronics) , organic chemistry , quantum mechanics , chromatography