Etching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment | Zendy

Chen Li | Zendy; Thorsten Hofmann | Zendy; Klaus Edinger | Zendy; Valery Godyak | Zendy; G. S. Oehrlein | Zendy

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Etching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

Author(s) -

Chen Li,

Thorsten Hofmann,

Klaus Edinger,

Valery Godyak,

G. S. Oehrlein

Publication year - 2020

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.5143538

Subject(s) - atomic physics , materials science , cathode , plasma , electron , langmuir probe , reactive ion etching , acceleration voltage , plasma cleaning , ionization , secondary electrons , etching (microfabrication) , cathode ray , analytical chemistry (journal) , plasma diagnostics , chemistry , nanotechnology , ion , physics , layer (electronics) , quantum mechanics , chromatography , organic chemistry

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