Open AccessBand alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
Author(s) -
Chaker Fares,
F. Ren,
E. S. Lambers,
David C. Hays,
B. P. Gila,
S. J. Pearton
Publication year - 2018
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5052620
Subject(s) - heterojunction , atomic layer deposition , x ray photoelectron spectroscopy , band gap , band offset , molecular beam epitaxy , materials science , optoelectronics , analytical chemistry (journal) , spectroscopy , valence band , chemistry , thin film , epitaxy , layer (electronics) , nanotechnology , nuclear magnetic resonance , physics , chromatography , quantum mechanics