Open AccessBand alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
Author(s) -
Chaker Fares,
F. Ren,
E. S. Lambers,
David C. Hays,
S. J. Pearton
Publication year - 2018
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5052620
Subject(s) - atomic layer deposition , heterojunction , x ray photoelectron spectroscopy , materials science , band gap , band offset , molecular beam epitaxy , optoelectronics , spectroscopy , wide bandgap semiconductor , analytical chemistry (journal) , valence band , thin film , epitaxy , layer (electronics) , nanotechnology , chemistry , nuclear magnetic resonance , physics , quantum mechanics , chromatography
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