Open AccessInfluence of mask material on the electrical properties of selective area epitaxy GaN microstructures
Author(s) -
Isra Mahaboob,
Kasey Hogan,
Steven W. Novak,
F. ShahedipourSandvik,
Randy P. Tompkins,
Nathan Lazarus
Publication year - 2018
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5026804
Subject(s) - materials science , dopant , hall effect , microstructure , optoelectronics , electrical resistivity and conductivity , impurity , analytical chemistry (journal) , dielectric , epitaxy , doping , secondary ion mass spectrometry , composite material , ion , chemistry , electrical engineering , engineering , organic chemistry , chromatography , layer (electronics)