Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures | Zendy

Isra Mahaboob | Zendy; Kasey Hogan | Zendy; Steven W. Novak | Zendy; F. ShahedipourSandvik | Zendy; Randy P. Tompkins | Zendy; Nathan Lazarus | Zendy

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Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures

Author(s) -

Isra Mahaboob,

Kasey Hogan,

Steven W. Novak,

F. ShahedipourSandvik,

Randy P. Tompkins,

Nathan Lazarus

Publication year - 2018

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.5026804

Subject(s) - materials science , dopant , microstructure , hall effect , optoelectronics , electrical resistivity and conductivity , impurity , epitaxy , dielectric , doping , analytical chemistry (journal) , secondary ion mass spectrometry , nanotechnology , composite material , ion , electrical engineering , layer (electronics) , chemistry , engineering , organic chemistry , chromatography

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