Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime | Zendy

Eddy Simoen | Zendy; Hariharsudan Sivaramakrishnan Radhakrishnan | Zendy; Md Gius Uddin | Zendy; Ivan Gordon | Zendy; Jef Poortmans | Zendy; Chong Wang | Zendy; Wei Li | Zendy

Open Access

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Author(s) -

Eddy Simoen,

Hariharsudan Sivaramakrishnan Radhakrishnan,

Md Gius Uddin,

Ivan Gordon,

Jef Poortmans,

Chong Wang,

Wei Li

Publication year - 2018

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.5026529

Subject(s) - deep level transient spectroscopy , carrier lifetime , wafer , silicon , crystallographic defect , materials science , vacancy defect , plasma etching , impurity , etching (microfabrication) , plasma , recombination , spectroscopy , analytical chemistry (journal) , layer (electronics) , molecular physics , chemistry , atomic physics , optoelectronics , crystallography , nanotechnology , chromatography , biochemistry , physics , organic chemistry , quantum mechanics , gene

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