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Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx)2Se3 buffer layers
Author(s) -
Yong Wang,
Theresa P. Ginley,
Stephanie Law
Publication year - 2018
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5015968
Subject(s) - topological insulator , sapphire , molecular beam epitaxy , materials science , buffer (optical fiber) , annealing (glass) , epitaxy , topology (electrical circuits) , thin film , optoelectronics , layer (electronics) , condensed matter physics , nanotechnology , metallurgy , optics , computer science , physics , laser , telecommunications , mathematics , combinatorics

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