Open AccessRealizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers
Author(s) -
Yu-De Lin,
Felicia McGuire,
Aaron D. Franklin
Publication year - 2017
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.5002558
Subject(s) - ferroelectricity , materials science , optoelectronics , annealing (glass) , coercivity , nitride , hafnium , transistor , field effect transistor , zirconium , dielectric , nanotechnology , electrical engineering , layer (electronics) , composite material , metallurgy , physics , engineering , voltage , condensed matter physics
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