Open AccessFabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT
Author(s) -
Rezaul Hasan,
Abhishek Motayed,
Shamiul Fahad,
Mulpuri V. Rao
Publication year - 2017
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4998937
Subject(s) - high electron mobility transistor , materials science , optoelectronics , leakage (economics) , infrasound , transistor , subthreshold conduction , electrical engineering , physics , voltage , engineering , acoustics , economics , macroeconomics
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