Comparison study of the low temperature growth of dilute GeSn and Ge | Zendy

Perry C. Grant | Zendy; Wei Dou | Zendy; Bader Alharthi | Zendy; Joshua M. Grant | Zendy; Aboozar Mosleh | Zendy; Wei Du | Zendy; Baohua Li | Zendy; Mansour Mortazavi | Zendy; Hameed A. Naseem | Zendy; Shui-Qing Yu | Zendy

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Comparison study of the low temperature growth of dilute GeSn and Ge

Author(s) -

Perry C. Grant,

Wei Dou,

Bader Alharthi,

Joshua M. Grant,

Aboozar Mosleh,

Wei Du,

Baohua Li,

Mansour Mortazavi,

Hameed A. Naseem,

Shui-Qing Yu

Publication year - 2017

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4990773

Subject(s) - germane , materials science , nucleation , chemical vapor deposition , volumetric flow rate , growth rate , exothermic reaction , tin , crystal growth , germanium , chemical engineering , deposition (geology) , analytical chemistry (journal) , nanotechnology , crystallography , chemistry , optoelectronics , metallurgy , organic chemistry , thermodynamics , silicon , physics , geometry , mathematics , engineering , paleontology , sediment , biology

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