Open AccessSurface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE
Author(s) -
David F. Storm,
Thomas O. McConkie,
Matthew T. Hardy,
D. Scott Katzer,
Neeraj Nepal,
David J. Meyer,
David J. Smith
Publication year - 2017
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4977777
Subject(s) - materials science , molecular beam epitaxy , impurity , chemical vapor deposition , epitaxy , transmission electron microscopy , thermal desorption , silicon , layer (electronics) , analytical chemistry (journal) , optoelectronics , desorption , nanotechnology , chemistry , adsorption , organic chemistry , chromatography