Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE | Zendy

David F. Storm | Zendy; Thomas O. McConkie | Zendy; Matthew T. Hardy | Zendy; D. S. Katzer | Zendy; Neeraj Nepal | Zendy; David J. Meyer | Zendy; David J. Smith | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

Author(s) -

David F. Storm,

Thomas O. McConkie,

Matthew T. Hardy,

D. S. Katzer,

Neeraj Nepal,

David J. Meyer,

David J. Smith

Publication year - 2017

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4977777

Subject(s) - materials science , molecular beam epitaxy , impurity , epitaxy , chemical vapor deposition , silicon , transmission electron microscopy , optoelectronics , layer (electronics) , analytical chemistry (journal) , thermal desorption , chemical engineering , desorption , nanotechnology , adsorption , chemistry , organic chemistry , chromatography , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research