Current relaxation analysis in AlGaN/GaN high electron mobility transistors | Zendy

A. Y. Polyakov | Zendy; N. B. Smirnov | Zendy; Ivan Shchemerov | Zendy; InHwan Lee | Zendy; Taehoon Jang | Zendy; А. А. Дорофеев | Zendy; Nadezhda B. Gladysheva | Zendy; E. S. Kondratyev | Zendy; Yulia A. Turusova | Zendy; R. A. Zinovyev | Zendy; Andrei V. Turutin | Zendy; F. Ren | Zendy; S. J. Pearton | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Author(s) -

A. Y. Polyakov,

N. B. Smirnov,

Ivan Shchemerov,

InHwan Lee,

Taehoon Jang,

А. А. Дорофеев,

Nadezhda B. Gladysheva,

E. S. Kondratyev,

Yulia A. Turusova,

R. A. Zinovyev,

Andrei V. Turutin,

F. Ren,

S. J. Pearton

Publication year - 2017

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4973973

Subject(s) - logarithm , transistor , relaxation (psychology) , materials science , gaussian , exponential function , electron , ionization , spectral line , exponential decay , homogeneous broadening , optoelectronics , current (fluid) , transient (computer programming) , computational physics , condensed matter physics , molecular physics , doppler broadening , physics , quantum mechanics , voltage , mathematics , mathematical analysis , psychology , social psychology , ion , thermodynamics , computer science , operating system

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research