Open AccessCurrent relaxation analysis in AlGaN/GaN high electron mobility transistors
Author(s) -
A. Y. Polyakov,
N. B. Smirnov,
I. Shchemerov,
In Hwan Lee,
T. Jang,
А. А. Дорофеев,
Н. Б. Гладышева,
E. S. Kondratyev,
Yulia A. Turusova,
R. A. Zinovyev,
Andrei V. Turutin,
F. Ren,
S. J. Pearton
Publication year - 2017
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4973973
Subject(s) - logarithm , relaxation (psychology) , transistor , exponential function , gaussian , electron , spectral line , ionization , homogeneous broadening , materials science , exponential decay , current (fluid) , computational physics , condensed matter physics , atomic physics , optoelectronics , doppler broadening , physics , quantum mechanics , mathematics , voltage , mathematical analysis , psychology , social psychology , ion , thermodynamics