Open AccessElectron beam lithography patterned hydrogen silsesquioxane resist as a mandrel for self-aligned double patterning application
Author(s) -
Vishal Desai,
John G. Hartley,
Nathaniel C. Cady
Publication year - 2016
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4963194
Subject(s) - mandrel , hydrogen silsesquioxane , resist , materials science , lithography , electron beam lithography , etching (microfabrication) , multiple patterning , critical dimension , reactive ion etching , chemical mechanical planarization , nanotechnology , plasma etching , dry etching , photolithography , optoelectronics , optics , composite material , polishing , physics , layer (electronics)