Open AccessEvaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates
Author(s) -
F. Ren,
S. J. Pearton,
Shihyun Ahn,
Yi-Hsuan Lin,
Francisco Machuca,
Robert E. Weiss,
Alex Welsh,
Martha R. McCartney,
David J. Smith,
Ivan I. Kravchenko
Publication year - 2016
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4963064
Subject(s) - materials science , high electron mobility transistor , optoelectronics , sapphire , epitaxy , layer (electronics) , transmission electron microscopy , buffer (optical fiber) , transistor , optics , laser , nanotechnology , electrical engineering , voltage , engineering , physics
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