Open AccessChemical downstream etching of Ge, Si, and SiNx films
Author(s) -
Michael David Henry,
E Douglas
Publication year - 2016
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4961944
Subject(s) - etching (microfabrication) , dry etching , nitride , reactive ion etching , materials science , silicon nitride , layer (electronics) , buffered oxide etch , microelectromechanical systems , isotropic etching , etch pit density , germanium , plasma etching , silicon , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , chromatography
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