Open AccessEffects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors
Author(s) -
Byung-Jae Kim,
Shihyun Ahn,
F. Ren,
S. J. Pearton,
Gwangseok Yang,
Jihyun Kim
Publication year - 2016
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4959028
Subject(s) - materials science , transconductance , irradiation , annealing (glass) , optoelectronics , transistor , saturation current , wide bandgap semiconductor , proton , analytical chemistry (journal) , electrical engineering , composite material , voltage , chemistry , physics , chromatography , nuclear physics , engineering , quantum mechanics
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