Open AccessEffects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors
Author(s) -
Byung Jae Kim,
Shihyun Ahn,
F. Ren,
S. J. Pearton,
Gwangseok Yang,
Ji Hyun Kim
Publication year - 2016
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4959028
Subject(s) - transconductance , materials science , irradiation , annealing (glass) , optoelectronics , transistor , saturation current , high electron mobility transistor , analytical chemistry (journal) , chemistry , electrical engineering , composite material , voltage , chromatography , physics , nuclear physics , engineering