Open AccessDeep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates
Author(s) -
A. Y. Polyakov,
N. B. Smirnov,
Andrei V. Turutin,
I. S. Shemerov,
F. Ren,
S. J. Pearton,
J. W. Johnson
Publication year - 2016
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4953347
Subject(s) - deep level transient spectroscopy , materials science , optoelectronics , acceptor , transistor , vacancy defect , diode , electron mobility , gallium nitride , light emitting diode , layer (electronics) , silicon , voltage , condensed matter physics , nanotechnology , chemistry , electrical engineering , crystallography , physics , engineering
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