Open AccessIncorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy
Author(s) -
Sai Krishna Ojha,
Pavan Kumar Kasanaboina,
C. L. Reynolds,
T. A. Rawdanowicz,
Yang Liu,
Ryan M. White,
Shanthi Iyer
Publication year - 2016
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4943600
Subject(s) - dopant , nanowire , doping , molecular beam epitaxy , materials science , photoluminescence , optoelectronics , fermi level , band gap , nanotechnology , raman spectroscopy , shell (structure) , epitaxy , layer (electronics) , optics , composite material , physics , quantum mechanics , electron