Open AccessIncorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy
Author(s) -
Sai Krishna Ojha,
Pavan Kumar Kasanaboina,
Claude Lewis Reynolds,
T. A. Rawdanowicz,
Yang Liu,
Ryan M. White,
Shanthi Iyer
Publication year - 2016
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4943600
Subject(s) - dopant , nanowire , materials science , doping , molecular beam epitaxy , optoelectronics , photoluminescence , raman spectroscopy , band gap , nanotechnology , fermi level , shell (structure) , epitaxy , layer (electronics) , optics , composite material , physics , quantum mechanics , electron
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom