Open AccessCritical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures
Author(s) -
Aymeric Maros,
N. N. Faleev,
Richard R. King,
Christiana B. Honsberg,
Diana Convey,
Haipeng Xie,
Fernando Ponce
Publication year - 2016
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4942897
Subject(s) - materials science , heterojunction , metastability , molecular beam epitaxy , epitaxy , relaxation (psychology) , transmission electron microscopy , condensed matter physics , dislocation , electron diffraction , crystallography , diffraction , stress relaxation , gallium arsenide , optoelectronics , optics , nanotechnology , chemistry , composite material , creep , physics , psychology , social psychology , organic chemistry , layer (electronics)