Open AccessSelf-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy
Author(s) -
Rui La,
Janet L. Pan,
F. Bastiman,
C. W. Tu
Publication year - 2016
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4941133
Subject(s) - nanowire , molecular beam epitaxy , photoluminescence , materials science , annealing (glass) , epitaxy , vapor–liquid–solid method , shell (structure) , nitride , catalysis , nanotechnology , optoelectronics , chemistry , composite material , layer (electronics) , biochemistry