Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma | Zendy

Dominik Metzler | Zendy; Chen Li | Zendy; Sebastian Engelmann | Zendy; Robert L. Bruce | Zendy; Eric Joseph | Zendy; G. S. Oehrlein | Zendy

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Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

Author(s) -

Dominik Metzler,

Chen Li,

Sebastian Engelmann,

Robert L. Bruce,

Eric Joseph,

G. S. Oehrlein

Publication year - 2015

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.4935462

Subject(s) - etching (microfabrication) , x ray photoelectron spectroscopy , silicon , langmuir probe , materials science , plasma , analytical chemistry (journal) , sputtering , reactive ion etching , oxide , layer (electronics) , plasma etching , ion , fluorocarbon , chemical engineering , nanotechnology , optoelectronics , chemistry , plasma diagnostics , thin film , composite material , metallurgy , physics , organic chemistry , quantum mechanics , chromatography , engineering

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