Structure and electrical properties of Nb-Ge-C nanocomposite coatings | Zendy

Olof Tengstrand | Zendy; Nils Nedfors | Zendy; Lars Fast | Zendy; A. Flink | Zendy; Ulf Jansson | Zendy; Per Eklund | Zendy; Lars Hultman | Zendy

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Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Author(s) -

Olof Tengstrand,

Nils Nedfors,

Lars Fast,

A. Flink,

Ulf Jansson,

Per Eklund,

Lars Hultman

Publication year - 2014

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.4882856

Subject(s) - materials science , nanocomposite , amorphous solid , electrical resistivity and conductivity , equiaxed crystals , crystallite , porosity , composite material , sputter deposition , sputtering , thin film , microstructure , crystallography , nanotechnology , metallurgy , chemistry , electrical engineering , engineering

Nb-Ge-C nanocomposite thin films were deposited by dc magnetron sputtering using three elemental targets. The films consist of substoichiometric NbCx in a nanometer-thick matrix of amorphous C and Ge. Films with no Ge contain grains that are elongated in the growth direction with a (111) preferred crystallographic orientation. With the addition of ∼12 at. % Ge, the grains are more equiaxed and exhibit a more random orientation. At even higher Ge contents, the structure also becomes denser. The porous structure of the low Ge content films result in O uptake from the ambient. With higher C content in the films both the amount of amorphous C and C/Nb-ratio increases. The contact resistance was measured by four-point technique as a function of contact force between 0 and 10 N. The lowest contact resistance (1.7 mΩ) is obtained at 10 N. The resistivity varies between 470 and 1700 μΩ·cm depending on porosity and O content.

At the time for thesis presentation publication was in status: Manuscript

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