Open AccessModel for nanopillar growth by focused helium ion-beam-induced deposition
Author(s) -
Paul F. A. Alkemade,
Ping Chen,
Emile van Veldhoven,
Diederik Maas
Publication year - 2010
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.3517536
Subject(s) - nanopillar , ion , apex (geometry) , materials science , helium , deposition (geology) , beam (structure) , electron , focused ion beam , chemical physics , molecular physics , nanotechnology , atomic physics , chemistry , optics , nanostructure , physics , geology , geometry , nuclear physics , paleontology , mathematics , organic chemistry , sediment
An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This model describes the competition between pillar growth in vertical and lateral directions. It assumes that vertical growth is induced by incident primary ions and type-1 secondary electrons, whereas lateral growth is induced by scattered ions and type-2 secondary ions. An essential element of the model is the notion that depletion of adsorbed precursor molecules occurs only at the pillars’ apex. Depletion impedes vertical growth at the apex, allowing more time for lateral outgrowth of the pillar’s sidewalls. The model describes qualitatively the trends in measured vertical, lateral, and volumetric growth rates of PtC pillars as functions of the ion-beam current. It can be used to design growth experiments and Monte Carlo simulations.QN/Quantum NanoscienceApplied Science
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