Patchwork field emission properties of lanthanum monosulfide thin films | Zendy

V. Semet | Zendy; M. Cahay | Zendy; Vu Thien Binh | Zendy; Steven B. Fairchild | Zendy; Xin Wu | Zendy; D. J. Lockwood | Zendy

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Patchwork field emission properties of lanthanum monosulfide thin films

Author(s) -

V. Semet,

M. Cahay,

Vu Thien Binh,

Steven B. Fairchild,

Xin Wu,

D. J. Lockwood

Publication year - 2006

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.2354161

Subject(s) - work function , field electron emission , current density , materials science , thin film , lanthanum , electric field , analytical chemistry (journal) , field (mathematics) , anode , nanotechnology , chemistry , electrode , inorganic chemistry , physics , electron , mathematics , layer (electronics) , quantum mechanics , chromatography , pure mathematics

The field emission properties of lanthanum monosulfide (LaS) films, deposited on Si substrates by pulsed laser deposition, have been thoroughly analyzed via the scanning anode field emission microscopy technique. Using the conventional Fowler-Nordheim relation, the work function of LaS thin films has been extracted from the slope of the plot ln (J/F2) vs 1/F, where J is the field emission current density and F is the local applied electric field. The threshold for an emission current density of 1 mA/cm2 occurs around a 230 V/\u3bcm electric field applied across the vacuum gap. This leads to an outstanding, reproducible effective work function value of ~1 eV across a 1 cm2 sample area.Peer reviewed: NoNRC publication: Ye

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