Pulsed laser deposition of lanthanum monosulfide thin films on silicon substrates | Zendy

Steven B. Fairchild | Zendy; J. H. Jones | Zendy; M. Cahay | Zendy; K. Garre | Zendy; P. Draviam | Zendy; P. Boolchand | Zendy; Xin Wu | Zendy; D. J. Lockwood | Zendy

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Pulsed laser deposition of lanthanum monosulfide thin films on silicon substrates

Author(s) -

Steven B. Fairchild,

J. H. Jones,

M. Cahay,

K. Garre,

P. Draviam,

P. Boolchand,

Xin Wu,

D. J. Lockwood

Publication year - 2005

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.1856477

Subject(s) - materials science , pulsed laser deposition , nanocrystalline material , thin film , silicon , amorphous solid , lattice constant , substrate (aquarium) , microelectronics , surface roughness , transmission electron microscopy , analytical chemistry (journal) , diffraction , optoelectronics , nanotechnology , optics , crystallography , composite material , chemistry , geology , physics , oceanography , chromatography

Thin films of lanthanum monosulfide (LaS) have been successfully deposited on Si substrates by pulsed laser deposition. The values of deposition parameters (chamber pressure, substrate temperature, substrate-to-target separation, laser energy, repetition rate, and spot size on the target) leading to a successful growth of films in their cubic rocksalt structure are identified. The films are golden yellow in appearance with a mirror-like surface morphology and possess a sheet resistance around 0.1\u3a9\u2215square. X-ray diffraction analysis of thick films (several microns) leads to a lattice constant of 5.863(7)\uc5, which is close to the bulk LaS value. High-resolution transmission electron microscopy reveals the films to be comprised of nanocrystalline regions separated by amorphous ones. The root-mean-square variation of film surface roughness measured over a 1\u3bcm\ud71\u3bcm area is found to be 1.74nm by atomic force microscopy. These films have potential for semiconductor, vacuum microelectronics, and optoelectronics applications.Peer reviewed: NoNRC publication: Ye

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