z-logo
Premium
Soil organic carbon in cropping sequences with predominance of soya bean in the argentinean humid Pampas
Author(s) -
Martinez Juan P.,
Crespo Cecilia,
Sainz Rozas Hernán,
Echeverría Hernán,
Studdert Guillermo,
Martinez Fernado,
Cordone Graciela,
Barbieri Pablo
Publication year - 2020
Publication title -
soil use and management
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.709
H-Index - 81
eISSN - 1475-2743
pISSN - 0266-0032
DOI - 10.1111/sum.12547
Subject(s) - monoculture , crop rotation , agronomy , soil carbon , cover crop , crop , soya bean , crop residue , chemistry , total organic carbon , cropping system , fertilizer , soil water , environmental science , biology , environmental chemistry , food science , soil science , agriculture , ecology
Soya bean ( Glycine max (L.) Merr.) monoculture can lead to a decrease in labile fractions of soil organic carbon ( SOC ). This study sought to evaluate the effects of cover crops ( CC ), application of fertilizer, and crop rotation on SOC , particulate organic carbon ( POC ), and soil carbon input in soya bean‐based crop sequences under a no‐till cropping system in the Argentinean Humid Pampas. Five crop sequences at two sites differing in initial SOC were evaluated: continuous soya bean (Sb), continuous soya bean fertilized with phosphorus (P) and sulphur (S) (Sbf), grass CC / PS ‐fertilized soya bean ( CC /Sbf), nitrogen (N)‐fertilized CC / PS ‐fertilized soya bean ( CC f/Sbf) and NPS ‐fertilized crop rotation with high intensification sequence index ( ISI ) (Rot). At 0–5 cm, SOC and POC were higher ( p  < .05) in the sequences with higher residue‐C supply ( CC /Sbf; CC f/Sbf and Rot) at both sites. Changes in SOC at 0–20 cm simulated by AMG model closely tracked measured results at 0–20 cm. Findings from this study suggest that the inclusion of CC or crop rotation with high ISI improved C balance in soils under crop sequences with soya bean predominance.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here