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Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials
Author(s) -
BALADÉS N.,
HERRERA M.,
SALES D.L.,
GUERRERO M.P.,
GUERRERO E.,
GALINDO P.L.,
MOLINA S.I.
Publication year - 2019
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/jmi.12763
Subject(s) - atomic units , semiconductor , materials science , crosstalk , alloy , optoelectronics , chemical physics , chemistry , optics , physics , composite material , quantum mechanics
Summary The influence of the neighbouring atomic‐columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using simulated HAADF‐STEM images is evaluated. The InAlAsSb alloy, a promising material in the photovoltaic field, is considered. We find that the so called ‘crosstalk’ effect plays an important role for the aimed compositional determination. The intensity transfer is larger from neighbouring atomic columns with higher average Z, and towards atomic columns with smaller Z. Our results show that in order to obtain precise information on the column composition, the HAADF‐STEM intensities of both columns need to be taken into account simultaneously.