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The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells
Author(s) -
CHERY N.,
NGO T.H.,
CHAUVAT M.P.,
DAMILANO B.,
COURVILLE A.,
DE MIERRY P.,
GRIEB T.,
MEHRTENS T.,
KRAUSE F.F.,
MÜLLERCASPARY K.,
SCHOWALTER M.,
GIL B.,
ROSENAUER A.,
RUTERANA P.
Publication year - 2017
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/jmi.12657
Subject(s) - indium , metalorganic vapour phase epitaxy , photoluminescence , heterojunction , quantum well , materials science , microstructure , indium nitride , epitaxy , optoelectronics , transmission electron microscopy , analytical chemistry (journal) , gallium nitride , chemistry , optics , laser , nanotechnology , physics , metallurgy , layer (electronics) , chromatography
Summary In this work, we analyse the microstructure and local chemical composition of green‐emitting In x Ga 1– x N/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.