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Development of an improved Kelvin probe force microscope for accurate local potential measurements on biased electronic devices
Author(s) -
BERCU N.B.,
GIRAUDET L.,
SIMONETTI O.,
MOLINARI M.
Publication year - 2017
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/jmi.12563
Subject(s) - kelvin probe force microscope , volta potential , optoelectronics , microscopy , semiconductor , materials science , scanning probe microscopy , atomic force microscopy , optics , nanotechnology , physics
Summary An improved setup for accurate near‐field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster‐scan of the KPFM‐AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe Force Microscopy in the case of in situ measurements on biased electronic devices. This improved KPFM‐AM setup has been tested on silicon‐based devices and organic semiconductor‐based devices such as organic field effect transistors (OFETs), showing differences up to 25% compared to the standard KPFM‐AM lift‐mode measurement method.