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Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements
Author(s) -
BONEF B.,
HAAS B.,
ROUVIÈRE JL.,
ANDRÉ R.,
BOUGEROL C.,
GRENIER A.,
JOUNEAU PH.,
ZUO JM.
Publication year - 2016
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/jmi.12340
Subject(s) - atom probe , transmission electron microscopy , superlattice , strain (injury) , electron tomography , atom (system on chip) , electron , transmission (telecommunications) , chemistry , materials science , crystallography , scanning transmission electron microscopy , molecular physics , nanotechnology , optoelectronics , physics , computer science , quantum mechanics , embedded system , medicine , telecommunications
Summary The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high‐resolution scanning transmission electron microscopy images. CdTe interfaces were grown by atomic layer epitaxy to prevent the spontaneous formation of ZnSe bonds. Both interfaces between ZnTe and CdSe are composed of alloyed layers of ZnSe. Pure CdTe interfaces are not observed and Zn atoms are also visible in the CdSe layers. This information is critical to design superlattices with the expected optoelectronic properties.