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Spin glass behavior and exchange bias effect in GaFeO 3 ‐type iron oxide
Author(s) -
Lin Xiaoxia,
Wang Jianlin,
Fu Zhengping,
Huang Qiuping,
Lu Yalin
Publication year - 2021
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17906
Subject(s) - antiferromagnetism , spintronics , exchange bias , materials science , ferromagnetism , spin glass , condensed matter physics , squid , magnetization , oxide , frustration , multiferroics , magnetic semiconductor , superconductivity , ferroelectricity , optoelectronics , magnetic anisotropy , magnetic field , ecology , physics , quantum mechanics , dielectric , metallurgy , biology
GaFeO 3 ‐type iron oxide is a promising room‐temperature multiferroic material due to its large magnetization and polarization. To expand the scope of its application, it is crucial to control the magnetic properties. Based on introducing the ferromagnetic (FM) Fe 3 O 4 in the antiferromagnetic (AFM) GaFeO 3 to build the FM‐AFM interface by changing the Ga/Fe ratio, Ga 0.69 Fe 1.31 O 3 (GFO) was successfully grown by the floating zone method. The resulting sample was characterized by X‐ray diffraction (XRD), and its magnetic properties were measured using a superconducting quantum interference device (SQUID). The temperature‐dependent AC susceptibility measurement shows that the spin glass‐like behavior of GFO at temperatures close to 50 K is a manifestation of the geometrical frustration arising from cation site disorder. In addition, the magnetic property measurement shows that the magnetic transition temperature T c is at 650 K, which is introduced by Fe 3 O 4 and suppresses the ferromagnetic transition around 320 K of GFO. Interestingly, the observed exchange bias effect, which does not exist in the bulk GaFeO 3 ‐type family, is attributed to the formation of an FM/AFM interface due to the existence of FM Fe 3 O 4 in the GFO. This study provides a new perspective on the properties of the GaFeO 3 ‐type family for potential applications in spintronic devices.