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Enhanced interfacial electronic transfer of BiVO 4 coupled with 2D g‐C 3 N 4 for visible‐light photocatalytic performance
Author(s) -
Xu Min,
Zhu Yan,
Yang Jingkai,
Li Wei,
Sun Chaoyang,
Cui Yan,
Liu Lu,
Zhao Hongli,
Liang Bo
Publication year - 2021
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17740
Subject(s) - photocatalysis , nanosheet , heterojunction , semiconductor , rhodamine b , band bending , materials science , electric field , visible spectrum , nanotechnology , optoelectronics , charge carrier , chemistry , catalysis , physics , organic chemistry , quantum mechanics
Abstract A BiVO 4 /2D g‐C 3 N 4 direct dual semiconductor photocatalytic system has been fabricated via electrostatic self‐assembly method of BiVO 4 microparticle and g‐C 3 N 4 nanosheet. According to experimental measurements and first‐principle calculations, the formation of built‐in electric field and the opposite band bending around the interface region in BiVO 4 /2D g‐C 3 N 4 as well as the intimate contact between BiVO 4 and 2D g‐C 3 N 4 will lead to high separation efficiency of charge carriers. More importantly, the intensity of bulid‐in electric field is greatly enhanced due to the ultrathin nanosheet structure of 2D g‐C 3 N 4 . As a result, BiVO 4 /2D g‐C 3 N 4 exhibits excellent photocatalytic performance with the 93.0% Rhodamine B (RhB) removal after 40 min visible light irradiation, and the photocatalytic reaction rate is about 22.7 and 10.3 times as high as that of BiVO 4 and 2D g‐C 3 N 4 , respectively. In addition, BiVO 4 /2D g‐C 3 N 4 also displays enhanced photocatalytic performance in the degradation of tetracycline (TC). It is expected that this work may provide insights into the understanding the significant role of built‐in electric field in heterostructure and fabricating highly efficient direct dual semiconductor systems.