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Discovery of the Griffiths phase in the quaternary nitrides Ge 1− x Sn x NFe 3
Author(s) -
Liu Chaocheng,
Kan Xucai,
Liu Xiansong,
Feng Shuangjiu,
Hu Jiyu
Publication year - 2021
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17734
Subject(s) - antiperovskite , condensed matter physics , antiferromagnetism , ferromagnetism , tetragonal crystal system , materials science , seebeck coefficient , electrical resistivity and conductivity , nitride , fermi level , laves phase , crystallography , electron , thermal conductivity , crystal structure , chemistry , physics , alloy , nanotechnology , metallurgy , intermetallic , layer (electronics) , quantum mechanics , composite material
We report the Griffiths phase (GP) and transport behavior in the quaternary antiperovskite nitrides Ge 1− x Sn x NFe 3 by a series of systematical magnetic susceptibility and thermoelectric behavior measurements. All the corresponding fitting exponent parameters λ GP  = 0.852 and 0.854 completely satisfy 0 ≤  λ  ≤ 1 in GP regions for Ge 0.7 Sn 0.3 NFe 3 and Ge 0.8 Sn 0.2 NFe 3 , respectively, indicating the different ferromagnetic concentrations in the system. An observed structural transition from distorted tetragonal structure ( I 4/ mcm ) to cubic antiperovskite ( Pm 3 m ) with increasing dopants should be responsible for the GP in Ge 1− x Sn x NFe 3 , which results in a magnetic phase transition from ferromagnetism (FM) to antiferromagnetism (AFM). Furthermore, the studies of electrical transport properties indicate that the Ge 1− x Sn x NFe 3 series of compounds perform a Fermi liquid behavior at low temperature while the stronger electron‐phonon scatterings are found in the high‐temperature region. In addition, the intensive electron–electron correlation is also determined since much higher value of lattice thermal conductivity κ l than the one of electronic thermal conductivity κ e .

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