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Preferred‐oriented polycrystalline Y 3 Fe 5 O 12 films grown on quartz with low microwave loss
Author(s) -
Bhoi Biswanath,
Diware Mangesh S.
Publication year - 2021
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17675
Subject(s) - materials science , gadolinium gallium garnet , yttrium iron garnet , ferromagnetic resonance , coercivity , amorphous solid , crystallite , spintronics , magnetization , ferromagnetism , optoelectronics , condensed matter physics , epitaxy , magnetic field , nanotechnology , metallurgy , crystallography , chemistry , physics , layer (electronics) , quantum mechanics
Yttrium iron garnet (YIG) is an ideal magnetic insulator for room temperature microwave and spintronic applications. The growth of high‐quality YIG films on substrates other than isostructural Gadolinium gallium garnet (GGG) is a primary requirement to integrate with current semiconductor electronics. Here, we are presenting the growth of highly oriented YIG films on amorphous quartz substrates using pulsed laser deposition. Structural characterization suggests the growth of pure polycrystalline garnet phase with preferred (100) orientation. The 430‐nm thick YIG film shows a saturation magnetization (4 π M S ) of 1620 (92% of the bulk value of YIG) with a very small coercive field of 6 Oe and a minimum value for ferromagnetic resonance linewidth of 78 Oe for the magnetic field applied perpendicular to the film plane. Estimated damping constant shows reasonably low value, beneficial for realizing the applications integrated with semiconductor technology. Importantly, the formation of YIG with preferred orientation could unveil enormous opportunities in the preparation of textured or single crystal materials on amorphous substrates.