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Thermally activated giant piezoelectricity and enhanced interface elastic strain‐mediated magnetoelectric coupling
Author(s) -
Du Qin,
Wang Wenli,
Wang Zhiguang,
Su Wei,
Deng Zhiyuan,
Wu Jingen,
Ma Ming,
Hu Zhongqiang,
Zhou Ziyao,
Liu Ming
Publication year - 2021
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17532
Subject(s) - materials science , piezoelectricity , phase boundary , condensed matter physics , dielectric , tetragonal crystal system , electric field , piezoelectric coefficient , phase (matter) , electromechanical coupling coefficient , ferroelectricity , single crystal , nuclear magnetic resonance , composite material , optoelectronics , chemistry , physics , organic chemistry , quantum mechanics
Perovskite materials with compositions in the vicinity of the steep morphotropic phase boundary (MPB) exhibit various intriguing properties including giant piezoelectricity and large dielectric constant. Aside from composition, the phase configuration of the perovskites is also strongly related to the ambient temperature. Here, we report a giant piezoelectricity of 10 980 pm/V at 93°C in the 0.7Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.3PbTiO 3 (PMN‐PT) single crystals which is more than five times larger than that at room temperature. The enhanced piezoelectricity can be attributed to the instability of the thermally induced tetragonal phase which can be converted to the orthorhombic phase by the external electric field in the <011> oriented single crystal. The transverse piezoelectricity has been investigated by measuring the electric‐field‐dependent ferromagnetic resonance (FMR) field in the CoFeB/PMN‐PT magnetoelectric (ME) heterostructures. The ME coupling coefficient has been increased from 49.3 to 476 Oe cm/kV as temperature increased from 25 to 90°C. The findings reveal that both longitudinal and transverse piezoelectricity in the PMN‐PT single crystals can be greatly enhanced by proper setting of ambient temperature, indicating an effective route for the design of strain‐mediated tunable devices with ultralow driving voltage.