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Compressive creep of SiC whisker/Ti 3 SiC 2 composites at high temperature in air
Author(s) -
Dash Apurv,
Malzbender Jürgen,
Dash Khushbu,
Rasinski Marcin,
Vaßen Robert,
Guillon Olivier,
GonzalezJulian Jesus
Publication year - 2020
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17323
Subject(s) - whisker , materials science , creep , composite material , silicon carbide , compressive strength
The compressive creep of a SiC whisker (SiC w ) reinforced Ti 3 SiC 2 MAX phase‐based ceramic matrix composites (CMCs) was studied in the temperature range 1100‐1300°C in air for a stress range 20‐120 MPa. Ti 3 SiC 2 containing 0, 10, and 20 vol% of SiC w was sintered by spark plasma sintering (SPS) for subsequent creep tests. The creep rate of Ti 3 SiC 2 decreased by around two orders of magnitude with every additional 10 vol% of SiC w . The main creep mechanisms of monolithic Ti 3 SiC 2 and the 10% CMCs appeared to be the same, whereas for the 20% material, a different mechanism is indicated by changes in stress exponents. The creep rates of 20% composites tend to converge to that of 10% at higher stress. Viscoplastic and viscoelastic creep is believed to be the deformation mechanism for the CMCs, whereas monolithic Ti 3 SiC 2 might have undergone only dislocation‐based deformation. The rate controlling creep is believed to be dislocation based for all the materials which is also supported by similar activation energies in the range 650‐700 kJ/mol.