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Engineering defect‐enabled 3D porous MoS 2 /C architectures for high performance lithium‐ion batteries
Author(s) -
Tao Kai,
Wang Xiangfei,
Xu Yifeng,
Liu Jing,
Song Xuefeng,
Fu Chaopeng,
Chen Xiaoqi,
Qu Xingzhou,
Zhao Xiaofeng,
Gao Lian
Publication year - 2020
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.17082
Subject(s) - materials science , electrochemistry , lithium (medication) , porosity , diffusion , ion , conductivity , chemical engineering , nanotechnology , electrical conductor , current density , electrode , composite material , chemistry , medicine , physics , organic chemistry , quantum mechanics , engineering , thermodynamics , endocrinology
Designing defect‐rich MoS 2 /C architectures with three‐dimensional (3D) porous frame effectively improve the electrochemical performance of lithium‐ion batteries (LIBs) owing to the improved conductivity and decreased diffusion distance of Li + ions for lithium storage. Herein, we report a reliable morphology engineering method combining with tunable defects to synthesize defect‐rich MoS 2 nanosheets with a few layers entrapped carbon sheath, forming a 3D porous conductive network architecture. The defect‐rich MoS 2 nanosheets with expanded interlayers can provide a shortened ion diffusion path, and realize the 3D Li + diffusion with faster kinetics. A 3D conductive interconnected carbon network is able to improve interparticle conductivity, concurrently maintaining the structural integrity. Benefiting from these intriguing features, the as‐prepared MoS 2 /C architectures exhibit excellent electrochemical performance: a high reversible capacity of 1163 mAh g −1 at a current density of 0.1 A g −1 after 100 cycles and a high rate capability of 800 mAh g −1 at 5 A g −1 . Defect content in MoS 2 /C architectures can be obtained by changing H 2 concentration. Compared with the counterparts with few defects, the defect‐rich MoS 2 /C architectures show improved electrochemical stability with a superior cycle life, illustrating a highly reversible capacity of 751 mAh g −1 at 0.5 A g −1 after 500 cycles.