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Preparation and characterization of heteroepitaxial Zn 2 SnO 4 single crystalline films prepared on MgO (100) substrates
Author(s) -
He Linan,
Luan Caina,
Wang Di,
Le Yong,
Feng Xianjin,
Ma Jin
Publication year - 2020
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16943
Subject(s) - materials science , stannate , pulsed laser deposition , zinc , thin film , spinel , band gap , single crystal , substrate (aquarium) , chemical engineering , analytical chemistry (journal) , nanotechnology , crystallography , optoelectronics , metallurgy , chemistry , oceanography , chromatography , geology , engineering
Zinc stannate (Zn 2 SnO 4 ) films were deposited on MgO (100) substrates by pulsed laser deposition, and Zn 2 SnO 4 monocrystalline films were obtained by postannealing process. The structures, surface morphologies, and optical properties of the Zn 2 SnO 4 films annealed at different temperatures were investigated in detail. Crystal structure analyses showed that the film annealed at 800°C was single crystal Zn 2 SnO 4 with an inverse‐spinel structure. The heteroepitaxial mechanism was further clarified by a schematic diagram, and the epitaxial relationships between the film and substrate were Zn 2 SnO 4 (400) || MgO (200) with Zn 2 SnO 4 [001] || MgO [001]. The obtained Zn 2 SnO 4 films exhibited excellent transparency. The optical band gap of the 800°C‐annealed Zn 2 SnO 4 film was about 3.97 eV. The extinction coefficients and refractive indexes of the Zn 2 SnO 4 films annealed at different temperatures as a function of wavelength were analyzed in detail.
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