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High‐recoverable energy‐storage density and dielectric tunability in Eu 3+ ‐doped NBT‐ x STO binary solid solution films
Author(s) -
Huang Wenhua,
Thatikonda Santhosh Kumar,
Ke Yifu,
Du Xingru,
Qin Ni,
Hao Aize,
Bao Dinghua
Publication year - 2020
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16761
Subject(s) - materials science , tetragonal crystal system , raman spectroscopy , analytical chemistry (journal) , doping , phase (matter) , phase boundary , dielectric , scanning electron microscope , crystallography , chemistry , optics , optoelectronics , composite material , physics , organic chemistry , chromatography
The Eu 3+ ‐doped (1 − x)Na 0.5 Bi 0.5 TiO 3 ‐ x SrTiO 3 (Eu‐NBT‐ x STO) thin films were prepared on Pt/Ti/SiO 2 /Si substrates. Raman analysis reveals that the phase structure may undergo a phase evolution of rhombohedral → rhombohedral + tetragonal (morphotropic phase boundary) → tetragonal with increasing content of STO. The scanning electron microscopy images show that the uniformity and high density of Eu‐NBT‐ x STO films were increased by adding STO, resulting in a pronounced effect on energy storage properties. The ɛ ‐ T curves confirm that a high phase transition diffuseness of γ = 2.02 ± 0.03 and 1.98 ± 0.03 was achieved in Eu‐NBT‐0.24STO and Eu‐NBT‐0.3STO films, respectively. Furthermore, a large recoverable energy storage density of 31.5 J cm −3 with an efficiency of 64% was obtained in Eu‐NBT‐0.3STO film, which also exhibited good thermal stability in the temperature range between −60°C and 80°C as well as long‐term stability up to 1 × 10 8 switching cycles. These results suggest that the Eu‐NBT‐ x STO films may be used in the novel and advanced energy storage capacitors.