Premium
Tuning oxygen vacancy in LiNbO 3 single crystals for prominent memristive and dielectric behaviors
Author(s) -
Wang Chunchang,
Sun Jie,
Ni Wei,
Yue Binbin,
Hong Fang,
Liu Hong,
Cheng Zhenxiang
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16522
Subject(s) - materials science , dielectric , ferroelectricity , phase transition , condensed matter physics , oxygen , relaxation (psychology) , chemical physics , dipole , phase (matter) , vacancy defect , anomaly (physics) , melting point , nanotechnology , optoelectronics , chemistry , physics , psychology , social psychology , organic chemistry , composite material
Understanding and manipulating the behavior of oxygen vacancy in oxide materials are of vital importance for rejuvenating materials with novel functionalities. We herein report a exciting phenomenon of oxygen vacancies changing from an isolated state to a clustered state in LiNbO 3 single crystals. The clustering of the oxygen vacancies induces a relaxor‐like dielectric anomaly and a first‐order phase transition. The relaxor‐like dielectric anomaly was argued to be a pseudo‐relaxor behavior resulting from the combined contributions of a dipolar relaxation and a Maxwell‐Wagner relaxation. The first‐order phase transition was ascribed to be an electric‐ferroelectric phase transition. Interestingly, a well‐defined melting point of the oxygen‐vacancy clusters was observed. At temperatures near the point, a small dc field can lead to resistance switching from a high resistance state to a low resistance state, yielding a prominent memristive effect with the OFF/ON ratio of 10 2 . Our results underscore that controlling the oxygen vacancy state is a promising strategy to tailor the properties of oxides for novel device applications.