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Induced p‐ type semiconductivity in yttria‐stabilized zirconia
Author(s) -
Vendrell Xavier,
West Anthony R.
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16492
Subject(s) - yttria stabilized zirconia , cubic zirconia , ceramic , materials science , thermal conduction , oxide , conductivity , conductor , ion , mineralogy , analytical chemistry (journal) , composite material , chemistry , metallurgy , organic chemistry , chromatography
Abstract 8 mol% yttria‐stabilized zirconia (8YSZ) ceramic is an oxide ion conductor at atmospheric pressure but shows the onset of p‐ type semiconduction, in addition to the preexisting oxide ion conduction, on application of a dc bias in the range 4‐66 Vcm −1 and at temperatures in the range 150°C‐750°C. The p ‐type behavior is attributed to the location and hopping of holes on oxygen. This contrasts with the commonly observed introduction of n‐ type conduction under reducing conditions and high fields. The hole conductivity increases with both dc bias and p O 2 . Its occurrence may contribute to the early stages of flash phenomena in 8YSZ ceramics.