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Interface reaction‐governed heteroepitaxial growth of YBa 2 Cu 3 O 7‐δ film on CeO 2 ‐buffered technical substrate
Author(s) -
Chu Jingyuan,
Zhao Yue,
Ji Yaotang,
Wu Wei,
Shi Jiangtao,
Hong Zhiyong,
Ma Lin,
Suo Hongli,
Jin Zhijian
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16452
Subject(s) - materials science , sintering , epitaxy , nucleation , microstructure , substrate (aquarium) , perovskite (structure) , scanning electron microscope , layer (electronics) , chemical engineering , high temperature superconductivity , superconductivity , phase (matter) , analytical chemistry (journal) , nanotechnology , composite material , condensed matter physics , chemistry , oceanography , geology , physics , organic chemistry , chromatography , engineering
Due to the high growth rate and environmental‐friendly, fluorine‐free metal‐organic decomposition routes (FF‐MOD) have attracted more attention for growth of high‐quality YBa 2 Cu 3 O 7‐δ (YBCO) films. Few works have been performed when using technical substrates. In this study, correlation among the sintering process, microstructure, and superconductivity of the YBCO was systematically established on the technical substrates capped with CeO 2 layer. We found that the optimal process conditions are mainly related to the enhanced transient liquid phase and BaCeO 3 . Combined X‐ray diffraction and scanning electron microscopy analyses indicate that high‐quality growth of YBCO film is a trade‐off of two different competition phenomena during sintering: (a) the presence of enhanced transient liquid phase, (b) the formation of BaCeO 3 at the interface. The former is beneficial to YBCO epitaxial growth/structure rearrangement, while the latter should be suppressed in view of minimizing YBCO partial decomposition triggered by the interfacial reaction. Moreover, we confirmed that both two aforementioned phenomena are somehow associated with the cross‐linkage between the sintering temperature and p O 2 during the YBCO conversion. According to this systemic study, the key parameters are defined to avoid the BaCeO 3 formation prior to the YBCO orientation nucleation. Structure and superconductivity of the YBCO film were also investigated. Remarkably, a high J c value of 3.69 mA/cm 2 (77 K, sf) was obtained in the YBCO film grown on the CeO 2 technical substrate deposited under optimized deposition conditions, which is rather comparable with that on the LaAlO 3 single crystal. TEM cross‐sectional observation reveals that the enhanced J c ( B ) properties of the YBCO film are mainly contributed by high density of short stacking faults. This work demonstrates the feasibility of FF‐MOD to fabricate high‐performance YBCO films on the CeO 2 ‐buffered technical substrate.