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Comparative study of the electrical characteristics of ALD‐ZnO thin films using H 2 O and H 2 O 2 as the oxidants
Author(s) -
Lee WooJae,
Bera Susanta,
Wan Zhixin,
Dai Wei,
Bae JongSeong,
Hong Tae Eun,
Kim KwangHo,
Ahn JiHoon,
Kwon SeHun
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16429
Subject(s) - crystallinity , atomic layer deposition , thin film , materials science , photoluminescence , substrate (aquarium) , oxygen , atmospheric temperature range , analytical chemistry (journal) , electrical resistivity and conductivity , chemical vapor deposition , copper indium gallium selenide solar cells , nanotechnology , chemical engineering , chemistry , optoelectronics , composite material , oceanography , physics , organic chemistry , engineering , chromatography , geology , meteorology , electrical engineering
ZnO thin films were deposited via atomic layer deposition (ALD) using H 2 O and H 2 O 2 as oxidants with substrate temperatures from 100°C to 200°C. The ZnO films deposited using H 2 O 2 (H 2 O 2 ‐ZnO) showed lower growth rates than those deposited with H 2 O (H 2 O‐ZnO) at these temperature range due to the lower vapor pressure of H 2 O 2 , which produces fewer OH − functional groups; the H 2 O 2 ‐ZnO films exhibited higher electrical resistivities than the H 2 O‐ZnO films. The selection of H 2 O 2 or H 2 O as oxidants was revealed to be very important for controlling the electrical properties of ALD‐ZnO thin films, as it affected the film crystallinity and number of defects. Compared to H 2 O‐ZnO, H 2 O 2 ‐ZnO exhibited poor crystallinity within a growth temperature range of 100‐200°C, while H 2 O 2 ‐ZnO showed a strong (002) peak intensity. Photoluminescence showed that H 2 O 2 ‐ZnO had more interstitial oxygen and fewer oxygen vacancies than H 2 O‐ZnO. Finally, both kinds of ZnO thin films were prepared as transparent resistive oxide layers for CIGS solar cells and were evaluated.