z-logo
Premium
Evaluation of rare‐earth element dopants (Sm and Er) on ablation resistance of ZrB 2 /SiC‐sintered billets
Author(s) -
Peña Angel A.,
Ver Jonathan P.,
Trice Rodney W.
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16422
Subject(s) - materials science , dopant , sintering , oxide , samarium , phase (matter) , rare earth element , metallurgy , doping , composite material , chemical engineering , rare earth , inorganic chemistry , chemistry , optoelectronics , organic chemistry , engineering
In this paper, how rare‐earth element dopants (samarium and erbium) affect the scale development of sintered ZrB 2 /SiC (ZBS) samples during ablation testing was investigated. ZBS billets with five different Sm to Er ratios, with a nominal total amount of 3 mol% dopant incorporated, were prepared by sintering in vacuum to 2000°C and subjected to 60 and 300 seconds ablation cycles. Differences in surface temperatures between ZBS samples with different dopant ratios suggests differences in spectral absorptance/emittance between each of the five compositions investigated. ZBS billets co‐doped with Sm and Er form a beneficial c 1 ‐(Sm/Er) 0.2 Zr 0.8 O 1.9 oxide scale as the majority phase, with some glassy phase observed. The crystalline c 1 ‐(Sm/Er) 0.2 Zr 0.8 O 1.9 oxide scale is more thermally stable than the m ‐ZrO 2 oxide scale typically formed in oxidized ZBS systems, resulting in a more adherent oxide scale to the unreacted material. The crystalline oxide scale and the amorphous phase are formed by a convection cell mechanism where the c 1 ‐(Sm/Er) 0.2 Zr 0.8 O 1.9 crystalline islands precipitate, grow, and coalesce.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom