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Crystal distortion and electrical properties of Ce‐doped BIT‐based piezoelectric ceramics
Author(s) -
Nie Rui,
Yuan Jing,
Chen Qiang,
Xing Jie,
Zhu Jianguo,
Zhang Wen
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16421
Subject(s) - ceramic , materials science , piezoelectricity , cerium , sintering , doping , curie temperature , analytical chemistry (journal) , hysteresis , relative density , mineralogy , composite material , condensed matter physics , metallurgy , optoelectronics , chemistry , physics , chromatography , ferromagnetism
Cerium (Ce)‐modified Bi 4 Ti 2.94 W 0.03 Ta 0.03 O 12 (BITWT) high Curie temperature ceramics (abbreviated as BITWT‐ x Ce) were fabricated by a conventional solid‐state sintering method. All BITWT‐ x Ce ceramics had an orthogonal phase, but the structural distortion of the Ce‐doped BITWT ceramics was higher than that of BITWT ceramics, which reduced symmetry and improved piezoelectric performance. The relative density ( ρ r ) of BITWT‐ x Ce ceramics was greater than 97%. Under the same conditions, the hysteresis loop of BITWT‐0.04Ce ceramics had higher saturation than that of BITWT ceramics. The piezoelectric constant ( d 33 ) was enhanced, and the highest d 33 of 24.7 pC/N at x = 0.04 was obtained, which was 25% higher than that of BITWT ceramics ( d 33 = 19.8 pC/N). In addition, the tentative conduction mechanism of BITWT‐ x Ce ceramics was also discussed. Two oxidations (Ce 3+ and Ce 4+ ) were present in the Ce‐doped BITWT ceramics.