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Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates
Author(s) -
Gao Min,
Tang Xiao,
Leung Chung Ming,
Dai Steve,
Li Jiefang,
Viehland Dwight D.
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16380
Subject(s) - materials science , ferroelectricity , antiferroelectricity , tetragonal crystal system , monoclinic crystal system , dielectric , phase transition , epitaxy , single crystal , reciprocal lattice , thin film , phase (matter) , pulsed laser deposition , crystal (programming language) , crystallography , analytical chemistry (journal) , condensed matter physics , diffraction , mineralogy , crystal structure , optics , optoelectronics , nanotechnology , chemistry , physics , organic chemistry , layer (electronics) , chromatography , programming language , computer science
(Pb 0.98 , La 0.02 )(Zr 0.95 , Ti 0.05 )O 3 (PLZT) thin films of 300 nm thickness were epitaxially deposited on (100), (110), and (111) SrTiO 3 single crystal substrates by pulsed laser deposition. X‐ray diffraction line and reciprocal space mapping scans were used to determine the crystal structure. Tetragonal ((001) PLZT) and monoclinic M A ((011) and (111) PLZT) structures were found, which influenced the stored energy density. Electric field‐induced antiferroelectric to ferroelectric (AFE→FE) phase transitions were found to have a large reversible energy density of up to 30 J/cm 3 . With increasing temperature, an AFE to relaxor ferroelectric (AFE→RFE) transition was found. The RFE phase exhibited lower energy loss, and an improved energy storage efficiency. The results are discussed from the perspective of crystal structure, dielectric phase transitions, and energy storage characteristics. Besides, unipolar drive was also performed, providing notably higher energy storage efficiency values due to low energy losses.