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Electric field tuning of magnetization in an antiferroelectric‐based heterostructure: Example of NMG/PLZST/NMG
Author(s) -
Han Liuyang,
Ponchel Freddy,
Tiercelin Nicolas,
Rémiens Denis,
Lasri Tuami,
Pernod Philippe,
Wang Genshui
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16356
Subject(s) - antiferroelectricity , electric field , heterojunction , condensed matter physics , materials science , phase transition , magnetization , ceramic , magnetoelectric effect , magnetic field , phase (matter) , ferroelectricity , multiferroics , physics , optoelectronics , composite material , dielectric , quantum mechanics
A magnetoelectric (ME) heterostructure was fabricated by depositing a Ni‐Mn‐Ga (NMG) magnetic film on an antiferroelectric (AFE) PLZST—(Pb, La)(Zr, Sn, Ti)O 3 —ceramic substrate. Significant and reversible electric field‐induced relative magnetization changes ( ∆M/M 0 ) were firstly observed in this magnetic/AFE heterostructure, and the ∆ M/M 0 vs electric field loops have been found to correspond well with the strain‐electric field curve of PLZST ceramic. The maximum ∆ M/M 0 variation can reach 15%, indicating an obvious strain‐mediated converse magnetoelectric (CME) effect. A maximum CME coefficient of 1.14 × 10 ‐9 s/m was obtained at the switching electric fields of PLZST. The collected results suggest that AFE materials with a large electric‐field‐induced phase transition strain could be alternative candidates in ME coupling heterostructures.