Premium
A novel lead‐free bismuth magnesium titanate thin films for energy storage applications
Author(s) -
Xie Juan,
Yao Zhonghua,
Hao Hua,
Xie Yanjiang,
Li Zongxin,
Liu Hanxing,
Cao Minghe
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16288
Subject(s) - materials science , wafer , dielectric , annealing (glass) , bismuth , thin film , lead titanate , bismuth titanate , energy storage , magnesium , silicon , optoelectronics , nanotechnology , composite material , ferroelectricity , metallurgy , physics , quantum mechanics , power (physics)
Bismuth magnesium titanate thin films were prepared on platinized silicon wafers via modified sol‐gel deposition method. Highly dense samples with pseudo‐cubic structure were obtained under proper thermal treatment technique. Electric breakdown strength was dependent on annealing temperature which resulted in the variation of energy storage performances. The optimal charged energy storage density W c ~ 47.8J/cm 3 and recoverable energy storage density W reco ~26.0 J/cm 3 of the 640°C annealed films at 100 Hz were achieved, respectively. This dielectric film can be a promising candidate for high voltage lead‐free energy storage applications due to their excellent performances.