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Dielectric relaxation properties of [001] c ‐, [011] c ‐, and [111] c ‐oriented 0.24PIN‐0.47PMN‐0.29PT single crystals
Author(s) -
Qi Xudong,
Sun Enwei,
Li Kai,
Li Shiyang,
Zhang Rui,
Yang Bin,
Cao Wenwu
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16281
Subject(s) - dielectric , permittivity , relaxation (psychology) , materials science , polarization (electrochemistry) , condensed matter physics , single crystal , analytical chemistry (journal) , crystallography , chemistry , physics , psychology , social psychology , optoelectronics , chromatography
The dielectric relaxation properties and freezing behavior of polar nanoregions (PNRs) of 0.24Pb(In 1/2 Nb 1/2 )O 3 ‐0.47Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.29PbTiO 3 single crystals have been studied. The Burns temperature T B , permittivity maximum temperature T m , and freezing temperature T f were determined, respectively. It was found that the temperature‐dependent dielectric constant can be well described by the Lorenz‐type relationship in the ergodic phase due to the existence of PNRs. The diffuseness factor δ is >30 and is basically not dependent on crystal orientation. The frequency dependence of T m obeys the Vogel‐Fulcher relationship. The residual effect of the poling electric field disappears and the remnant polarization has a sharp decrease near the freezing temperature T f .