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Effects of Cu–Zn phases on electronic properties in ZnO:Cu films
Author(s) -
Gao Yang,
Li Guojian,
Liu Shiying,
Chang Ling,
Wang Zhao,
Wang Qiang
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16266
Subject(s) - dopant , materials science , zinc , copper , doping , conductivity , vacancy defect , electrical resistivity and conductivity , alloy , analytical chemistry (journal) , phase (matter) , inorganic chemistry , chemical engineering , metallurgy , crystallography , chemistry , optoelectronics , organic chemistry , chromatography , electrical engineering , engineering
Abstract Theory predicts Cu‐doped ZnO (ZnO:Cu) has p ‐conductivity; however, this has only been demonstrated in a small number of experimental and mechanistic studies. In this paper, ZnO:Cu films were grown in situ with varying Cu content, prepared using radiofrequency atomic source–assisted molecular‐beam vapor deposition. The results indicate that ZnO:Cu films with dopant of Cu 2+ only had n ‐type behavior. As the Cu content increased, Cu + was the major dopant and the ZnO:Cu films had p ‐type behavior. However, excess Cu dopant resulted in the formation of second phases of Cu 2 O and Cu–Zn. The formation of a Cu–Zn phase increased the content of Zn vacancy, thus increasing hole concentration. Stronger alloy scattering decreased carrier mobility. Therefore, Cu + dopant and Zn vacancy give ZnO:Cu films p ‐conductivity properties.